Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON
H.Y. Yu(IMEC), S. Biesemans(IMEC), S. Locorotondo(IMEC), M. Jurczak(IMEC), Eddy Simoen(IMEC), S. Brus(University of Liège), Karl Opsomer(IMEC), Denis Shamiryan(IMEC), A. Lauwers, M. Niwa, Chun Zhao(University of Liverpool), Mark van Dal(Philips (United States)), Krtistien De Meyer(IMEC), A. Veloso(IMEC), J. A. Kittl(IMEC), E. Augendre(IMEC), P. Absil(IMEC), Xiaoyu Shi(IMEC), S. Severi(IMEC), R. Singanamalla(IMEC), Jean‐François de Marneffe(IMEC), Karen Maex(IMEC), S. Kubicek(IMEC)
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