Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applicationsK.G. Anil, S. Biesemans, E. Augendre et al.|Unknown|2004Cited by 35
High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation TechniqueLaurent Souriau, W. Vandervorst, Thang K. Nguyen et al.|Journal of The Electrochemical Society|2009Cited by 32
Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdownsB. Kaczer, G. Groeseneken, R. Degraeve et al.|Unknown|2004Cited by 26
On the scalability of source/drain current enhancement in thin film sSOIE. Augendre, S. Biesemans, Geert Eneman et al.|Unknown|2005Cited by 24
Demonstration of a New Approach Towards 0.25V Low-Vt CMOS Using Ni-Based FUSIS. Biesemans, H.Y. Yu, Philip Absil et al.|Unknown|2006Cited by 6