Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond
Geert Eneman(Research Foundation - Flanders), Aaron Thean(National University of Singapore), Andriy Hikavyy(IMEC), Nadine Collaert(IMEC), Wilfried Vandervorst(Imec the Netherlands), Matty Caymax(IMEC), Paola Favia(IMEC), A. De Keersgieter(IMEC), Liesbeth Witters(IMEC), Naoto Horiguchi(IMEC), H. Bender(IMEC), Mark van Dal(Philips (United States)), A. Veloso(IMEC), S. H. Lee(Samsung Pharm (South Korea)), Benjamin Vincent(IMEC), D.P. Brunco(Imec the Netherlands), Nafees Kabir(IMEC), Olivier Richard(IMEC), Jérôme Mitard(IMEC), Roger Loo(IMEC)
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