Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Geert Eneman et al.|Journal of The Electrochemical Society|2008Cited by 267
High performance Ge pMOS devices using a Si-compatible process flowPaul Zimmerman, Marc Heyns, G. Nicholas et al.|Unknown|2006Cited by 104
Interface engineering for Ge metal-oxide–semiconductor devicesA. Dimoulas, M. M. Heyns, D.P. Brunco et al.|Thin Solid Films|2007Cited by 89
Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stressR. Degraeve, G. Groeseneken, T. Kauerauf et al.|Unknown|2006Cited by 63
Record I<inf>ON</inf>/I<inf>OFF</inf> performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalabilityJérôme Mitard, Marc Heyns, Brice De Jaeger et al.|Unknown|2008Cited by 56