45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μ
K. Henson(Imec the Netherlands), S. Biesemans(IMEC), M. Kaiser(Philips (Netherlands)), Z. Tokeil(IMEC), Johan Vertommen(Lam Research (Austria)), Werner Boullart(IMEC), W. Deweerd(IMEC), C. Dachs(Philips (Belgium)), M. Jurczak(IMEC), F.N. Cubaynes(Philips (Belgium)), Jacob C. Hooker(Northwestern University), M. Demand(IMEC), Wilfried Vandervorst(Imec the Netherlands), B. Kaczer(IMEC), B. Coenegrachts(Lam Research (Austria)), H. Bender(IMEC), S. Beckx(Imec the Netherlands), J.-L. Everaert(IMEC), Olivier Richard(IMEC), R.J.P. Lander(NXP (Belgium)), T. Schram(IMEC)
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