Low temperature source/drain epitaxy and functional silicides: essentials for ultimate contact scalingClément Porret, Naoto Horiguchi, J.-L. Everaert et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 19
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μK. Henson, S. Biesemans, T. Schram et al.|Unknown|2005Cited by 12
Polycrystalline Si optimization for 45nm node Ni-FUSI gateXiaodong Shi, L. Daté, A. Rothschild et al.|Unknown|2006Cited by 1