Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stress
R. Degraeve(IMEC), G. Groeseneken(KU Leuven), T. Kauerauf(IMEC), Ph. Roussel(IMEC), B. Kaczer(IMEC), Stefan De Gendt(Imec the Netherlands), D.P. Brunco(Imec the Netherlands), M. Cho(IMEC), M. Zahid(IMEC), L.-Å. Ragnarsson(IMEC)
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