Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap Layer
H.Y. Yu(IMEC), S. Biesemans(IMEC), Bart Onsia, S. Brus(University of Liège), T. Kauerauf(IMEC), Christoph Adelmann(Imec the Netherlands), A. Lauwers(IMEC), P. Lehnen(IMEC), A. Veloso(IMEC), P. Absil(IMEC), S.Z. Chang(KU Leuven), K. M. Yin(Taiwan Semiconductor Manufacturing Company (United States))
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