Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

A. Kerber(Infineon Technologies (Germany)), Udo Schwalke(Technische Universität Darmstadt), L. Pantisano(IMEC), Ph. Roussel(IMEC), R. Degraeve(IMEC), E. Cartier(IBM (United States)), T. Kauerauf(IMEC), H.E. Maes(IMEC), G. Groeseneken(KU Leuven)
IEEE Transactions on Electron Devices
May 1, 2003
10.1109/ted.2003.813486
Cited by 67

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