Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectricsA. Kerber, Udo Schwalke, E. Cartier et al.|IEEE Electron Device Letters|2003Cited by 360
Low Weibull slope of breakdown distributions in high-k layersT. Kauerauf, G. Groeseneken, R. Degraeve et al.|IEEE Electron Device Letters|2002Cited by 96
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/ gate dielectricsA. Kerber, Udo Schwalke, E. Cartier et al.|Unknown|2003Cited by 92
Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodesA. Kerber, Udo Schwalke, E. Cartier et al.|IEEE Transactions on Electron Devices|2003Cited by 67
Characterization of the VT Instability in SiO2/HfO2 Gate DielectricsA. Kerber, Udo Schwalke, M. Rosmeulen et al.|TUbilio (Technical University of Darmstadt)|2003Cited by 64