Plasma doping and reduced crystalline damage for conformally doped fin field effect transistorsJae Wook Lee, Aaron Thean, Y. Sasaki et al.|Applied Physics Letters|2013Cited by 30
Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETsM. Togo, Aaron Thean, L. Pantisano et al.|Unknown|2012Cited by 13
Heated implantation with amorphous Carbon CMOS mask for scaled FinFETsM. Togo, Aaron Thean, Y. Sasaki et al.|Symposium on VLSI Technology|2013Cited by 7
Orientation Dependence of Si<sub>1-x</sub>C<sub>x</sub>:P Growth and the Impact on FinFET StructuresJohn Tolle, Roger Loo, K. Doran Weeks et al.|ECS Transactions|2013Cited by 5
RMG Tech. Integration in FinFET DevicesG. Boccardi, Aaron Thean, R. Ritzenthaler et al.|Unknown|2012Cited by 1