Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs
M. Togo(IMEC), Aaron Thean(IMEC), Roger Loo(IMEC), G. Mannaert(IMEC), S. Locorotondo(IMEC), J. W. Lee, Erik Rosseel(IMEC), S. Brus(University of Liège), Andriy Hikavyy(IMEC), L. Pantisano(IMEC), M. Demand(IMEC), A. De Keersgieter(IMEC), Naoto Horiguchi(IMEC), Geert Eneman(Research Foundation - Flanders), T. Chiarella(IMEC), G. Boccardi(IMEC), Raymond Krom(IMEC), S. E. Altamirano, R. Ritzenthaler(IMEC), Vladimir Machkaoutsan(ASM International (Belgium)), J. Tolle(Arizona State Museum), Jan Willem Maes(ASM International (Belgium))
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