Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications

K.G. Anil(IMEC), S. Biesemans(IMEC), A. Lauwers(IMEC), S. Brus(University of Liège), T. Schram(IMEC), K. Henson(Imec the Netherlands), A. Veloso(IMEC), E. Augendre(IMEC), Stefan Kubicek(Austrian Academy of Sciences), K. Devriendt(IMEC), Jean‐François de Marneffe(IMEC)
Unknown
January 1, 2004
10.1109/vlsit.2004.1345472
Cited by 35

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