High-Hole-Mobility Silicon Germanium on Insulator Substrates with High Crystalline Quality Obtained by the Germanium Condensation Technique
Laurent Souriau(IMEC), W. Vandervorst(IMEC), Matty Caymax(IMEC), Thang K. Nguyen(Institut polytechnique de Grenoble), S. Cristoloveanu(Institut polytechnique de Grenoble), E. Augendre(IMEC), Marc Meuris(IMEC), V. Terzieva(IMEC), Roger Loo(IMEC)
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