Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Brice De Jaeger et al.|Journal of The Electrochemical Society|2008Cited by 267
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)G. Wang, Bart Blanpain, Roger Loo et al.|Applied Physics Letters|2009Cited by 89
High Quality Ge Virtual Substrates on Si Wafers with Standard STI PatterningRoger Loo, Matty Caymax, G. Wang et al.|Journal of The Electrochemical Society|2009Cited by 87
Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6Federica Gencarelli, Marc Heyns, Benjamin Vincent et al.|Thin Solid Films|2011Cited by 81
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOSA. Veloso, Aaron Thean, H. Bender et al.|Unknown|2015Cited by 53