Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET Devices
R. Singanamalla(IMEC), S. Biesemans(IMEC), J.P. van Zijl(Philips (Netherlands)), G. Vellianitis(NXP (Belgium)), C. Ravit(NXP (Belgium)), Rita Vos(IMEC), S. Brus(University of Liège), Vasile Paraschiv(IMEC), Marcel A. Verheijen(Philips (Netherlands)), Hongya Yu(IMEC), J.C. Hooker(NXP (Belgium)), J. Pétry(Service Public Fédéral Économie), Stefan Kubicek(Austrian Academy of Sciences), J. G. M. van Berkum(Philips (Netherlands)), R.G.R. Weemaes(Philips (Netherlands)), K. De Meyer(IMEC), M. Kaiser(Philips (Netherlands))
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