Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer

J. Pétry(Service Public Fédéral Économie), J.C. Hooker(NXP (Belgium)), C. Ravit(NXP (Belgium)), Eddy Simoen(IMEC), S. Brus(University of Liège), Robert O’Connor(IMEC), Vasile Paraschiv(IMEC), Christoph Adelmann(Imec the Netherlands), Jurgen van Berkum(Philips (Netherlands)), A. Veloso(IMEC), Stefan Kubicek(Austrian Academy of Sciences), Sven Van Elshocht(Columbia University), R. Singanamalla(IMEC), Kuanchen Xiong(NXP (Belgium)), K. De Meyer(IMEC), S. Biesemans(IMEC)
Unknown
January 1, 2007
10.1109/iedm.2007.4418938
Cited by 2

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