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Vacancy and interstitial depth profiles in ion-implanted siliconPatrick Lévêque, V. Privitera, Andrej Kuznetsov et al.|Journal of Applied Physics|2003Cited by 25
Identification of hydrogen related defects in proton implanted float-zone siliconPatrick Lévêque, V. Privitera, Anders Hallén et al.|The European Physical Journal Applied Physics|2002Cited by 17
Separation of vacancy and interstitial depth profiles in proton- and boron-implanted siliconP. Pellegrino, B. G. Svensson, Patrick Lévêque et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|2002Cited by 5
Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. <b>80</b>, 1492 (2002)]P. Pellegrino, B. G. Svensson, J. Wong‐Leung et al.|Applied Physics Letters|2002Cited by 1