Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observationP. Pellegrino, B. G. Svensson, C. Jagadish et al.|Applied Physics Letters|2001Cited by 35
Vacancy and interstitial depth profiles in ion-implanted siliconPatrick Lévêque, V. Privitera, Anders Hallén et al.|Journal of Applied Physics|2003Cited by 25
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Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. <b>80</b>, 1492 (2002)]P. Pellegrino, B. G. Svensson, C. Jagadish et al.|Applied Physics Letters|2002Cited by 1