Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial materialM. K. Linnarsson, Eva Olsson, J. Wong‐Leung et al.|Applied Physics Letters|2001Cited by 47
Zn precipitation and Li depletion in Zn implanted ZnOKeng Siew Chan, J. Wong‐Leung, Lasse Vines et al.|Applied Physics Letters|2016Cited by 5
Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. <b>80</b>, 1492 (2002)]P. Pellegrino, B. G. Svensson, C. Jagadish et al.|Applied Physics Letters|2002Cited by 1