Vacancy and interstitial depth profiles in ion-implanted silicon
Patrick Lévêque(KTH Royal Institute of Technology), V. Privitera(Institute for Microelectronics and Microsystems), J. Wong‐Leung(Australian National University), C. Jagadish(Australian National University), Andrej Kuznetsov(University of Oslo), P. Pellegrino(KTH Royal Institute of Technology), Bengt Svensson(University of Oslo), Anders Hallén(KTH Royal Institute of Technology), H. Kortegaard Nielsen(KTH Royal Institute of Technology)
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