Response to “Comment on ‘Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation’ ” [Appl. Phys. Lett. <b>80</b>, 1492 (2002)]
P. Pellegrino(KTH Royal Institute of Technology), B. G. Svensson(KTH Royal Institute of Technology), J. Wong‐Leung(Australian National University), H. Kortegaard-Nielsen(KTH Royal Institute of Technology), C. Jagadish(Australian National University), Patrick Lévêque(KTH Royal Institute of Technology)
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