Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsBenjamin Vincent, Roger Loo, Yosuke Shimura et al.|Microelectronic Engineering|2010Cited by 105
Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic DevicesMohanchand Paladugu, Marc Heyns, Clément Merckling et al.|Crystal Growth & Design|2012Cited by 105
Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealingYen‐Chung Chang, M. Hong, Matty Caymax et al.|Applied Physics Letters|2010Cited by 72
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectricsLi‐Kang Chu, Marc Heyns, Clément Merckling et al.|Applied Physics Letters|2011Cited by 54
GaSb molecular beam epitaxial growth on <i>p</i>-InP(001) and passivation with <i>in situ</i> deposited Al2O3 gate oxideClément Merckling, J. Dekoster, Xiao Sun et al.|Journal of Applied Physics|2011Cited by 41