GaSb molecular beam epitaxial growth on <i>p</i>-InP(001) and passivation with <i>in situ</i> deposited Al2O3 gate oxide
Clément Merckling(IMEC), J. Dekoster(IMEC), Matty Caymax(IMEC), Marc Heyns(IMEC), Xiao Sun(Yale University), T. Hoffmann(IMEC), A. Alian(IMEC), V. V. Afanas’ev(IMEC), Guy Brammertz(IMEC)
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