Advancing CMOS beyond the Si roadmap with Ge and III/V devicesMarc Heyns, Liesbeth Witters, Brice De Jaeger et al.|Unknown|2011Cited by 60
GaSb molecular beam epitaxial growth on <i>p</i>-InP(001) and passivation with <i>in situ</i> deposited Al2O3 gate oxideClément Merckling, J. Dekoster, Xiao Sun et al.|Journal of Applied Physics|2011Cited by 41
Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layerClément Merckling, Matty Caymax, Xiao Sun et al.|Applied Physics Letters|2011Cited by 33