Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Benjamin Vincent(IMEC), Roger Loo(IMEC), J. Dekoster(IMEC), J. Demeulemeester(KU Leuven), Shigeaki Zaima(Nagoya University), Matty Caymax(IMEC), Takashi Nishimura(RIKEN Center for Computational Science), Shotaro Takeuchi(Fukui Prefectural University), Andrea Firrincieli(IMEC), Geert Eneman(Research Foundation - Flanders), Yosuke Shimura(Chiba University), Trudo Clarysse(IMEC), A. Vantomme(KU Leuven), Osamu Nakatsuka(Nagoya University)
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