Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
Li‐Kang Chu(National Taiwan University), Marc Heyns(IMEC), Clément Merckling(IMEC), Matty Caymax(IMEC), J. Kwo(National Tsing Hua University), J. Dekoster(IMEC), M. Hong(National Taiwan University), A. Alian(IMEC)
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