Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealingYen‐Chung Chang, M. Hong, J. Kwo et al.|Applied Physics Letters|2010Cited by 72
InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivationYen‐Chung Chang, T. S. Lay, J. Kwo et al.|Unknown|2007Cited by 0
Sub-nanometer EOT scaling on In<inf>0.53</inf>Ga<inf>0.47</inf>As with atomic layer deposited HfO<inf>2</inf> as gate dielectricKuen Yong Lee, J. Kwo, Pei-Ching Chang et al.|Proceedings of the International Power Modulator Symposium and High Voltage Workshop/Proceedings of the ... International Power Modulator Symposium and ... High Voltage Workshop|2008Cited by 0