Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOSA. Veloso, Aaron Thean, Geert Hellings et al.|Unknown|2015Cited by 53
(Invited) Vertical Nanowire FET Integration and Device AspectsA. Veloso, Aaron Thean, M. Cupak et al.|ECS Transactions|2016Cited by 50
Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient CircuitsA. Veloso, Philippe Matagne, Geert Eneman et al.|Unknown|2019Cited by 41
Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cellsA. Veloso, Aaron Thean, Bertrand Parvais et al.|Unknown|2016Cited by 37
The Role of Nonidealities in the Scaling of MoS<sub>2</sub> FETsDevin Verreck, Iuliana Radu, Goutham Arutchelvan et al.|IEEE Transactions on Electron Devices|2018Cited by 20