2D materials: roadmap to CMOS integrationCedric Huyghebaert, Iuliana Radu, Goutham Arutchelvan et al.|Unknown|2018Cited by 98
Ultra-scaled MOCVD MoS<sub>2</sub> MOSFETs with 42nm contact pitch and 250µA/µm drain currentQuentin Smets, Iuliana Radu, Goutham Arutchelvan et al.|Unknown|2019Cited by 85
Wafer-scale integration of double gated WS<sub>2</sub>-transistors in 300mm Si CMOS fabInge Asselberghs, Iuliana Radu, Quentin Smets et al.|Unknown|2020Cited by 57
Understanding ambipolar transport in MoS <sub>2</sub> field effect transistors: the substrate is the keyVivek Mootheri, Marc Heyns, Alessandra Leonhardt et al.|Nanotechnology|2020Cited by 27
The Role of Nonidealities in the Scaling of MoS<sub>2</sub> FETsDevin Verreck, Iuliana Radu, Goutham Arutchelvan et al.|IEEE Transactions on Electron Devices|2018Cited by 20