Ge oxide scavenging and gate stack nitridation for strained Si<sub>0.7</sub>Ge<sub>0.3</sub> pFinFETs enabling 35% higher mobility than Si
Hiroaki Arimura(IMEC), Naoto Horiguchi(IMEC), Thierry Conard(IMEC), E. Capogreco(IMEC), Paola Favia(IMEC), L.-Å. Ragnarsson(IMEC), S. Brus(University of Liège), J. Franco(KU Leuven), Adrian Chasin(IMEC), Kurt Wostyn(IMEC), S. Demuynck(IMEC), Jérôme Mitard(IMEC)
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