Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides
Mahmoud Rasras(IMEC), H.E. Maes(IMEC), G. Groeseneken(KU Leuven), R. Degraeve(IMEC), Ingrid De Wolf(IMEC), B. Kaczer(IMEC)
Cited by 39
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360