Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks
E. Amat(Universitat Autònoma de Barcelona), G. Groeseneken(KU Leuven), T. Kauerauf(IMEC), X. Aymerich(Vall d'Hebron Hospital Universitari), A. De Keersgieter(IMEC), R. Rodrı́guez(Universitat Autònoma de Barcelona), R. Degraeve(IMEC), M. Nafrı́a(Universitat Autònoma de Barcelona)
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