Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs.
Peter Verheyen(IMEC), S. Biesemans(IMEC), M. Jurczak(IMEC), B.-C. Lee(IMEC), Dirk Rondas(IMEC), Lieven Eeckhout(Ghent University Hospital), Frederik Leys(IMEC), Denis Shamiryan(IMEC), M. Demand(IMEC), Matty Caymax(IMEC), Geert Eneman(Research Foundation - Flanders), P. Absil(IMEC), Th.Y. Hoffman(IMEC), M. W. Goodwin(Texas Instruments (United States)), R. Rooyackers(IMEC), James Snow(IMEC), K. De Meyer(IMEC), Roger Loo(IMEC), H. Fujimoto(IMEC), C. Ravit(NXP (Belgium))
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