Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical PerformanceD.P. Brunco, Marc Heyns, Brice De Jaeger et al.|Journal of The Electrochemical Society|2008Cited by 267
High performance Ge pMOS devices using a Si-compatible process flowPaul Zimmerman, Marc Heyns, G. Nicholas et al.|Unknown|2006Cited by 104
Record I<inf>ON</inf>/I<inf>OFF</inf> performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalabilityJérôme Mitard, Marc Heyns, Brice De Jaeger et al.|Unknown|2008Cited by 56
Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface qualityFrederik Leys, Marc Heyns, Renaud Bonzom et al.|Materials Science in Semiconductor Processing|2006Cited by 53
The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETsMatty Caymax, Roger Loo, Frederik Leys et al.|Journal of The Electrochemical Society|2009Cited by 44