V<sub>t</sub> Fine-Tuning in Multi-V<sub>t</sub> Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET IntegrationHiroaki Arimura, Naoto Horiguchi, Suvidyakumar Homkar et al.|Unknown|2024Cited by 16
Ga+ focused ion beam lithography as a viable alternative for multiple fin field effect transistor prototypingAlessandra Leonhardt, Lucas Petersen Barbosa Lima, Marcos V. Puydinger dos Santos et al.|Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena|2016Cited by 8
A novel self-aligned double patterning integrated with Ga+ focused ion beam milling for silicon nanowire definitionAndressa Macedo Rosa, J. A. Diniz, Alessandra Leonhardt et al.|Microelectronic Engineering|2020Cited by 6
FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stackAlessandra Leonhardt, Leandro Tiago Manera, Marcos V. Puydinger dos Santos et al.|Unknown|2016Cited by 0