V<sub>t</sub> Fine-Tuning in Multi-V<sub>t</sub> Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration
Hiroaki Arimura(IMEC), Naoto Horiguchi(IMEC), Michael Givens(ASM International (Belgium)), Hans Mertens(IMEC), S. Brus(University of Liège), S. Biesemans(IMEC), Andrea Impagnatiello(IMEC), J. Franco(KU Leuven), Giuseppe Alessio Verni(ASM International (Belgium)), Vivek Mootheri(ASM International (Belgium)), L. Lukose(IMEC), T. Chiarella(IMEC), Chun‐Yang Yin(Universiti Teknologi MARA), W. Maqsood(IMEC), Lucas Petersen Barbosa Lima(IMEC), Suvidyakumar Homkar
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