Germanium for advanced CMOS anno 2009: a SWOT analysis
Matty Caymax(IMEC), Marc Heyns(IMEC), Annelies Delabie(IMEC), Eddy Simoen(IMEC), Brice De Jaeger(IMEC), G. Wang(IMEC), Geert Hellings(IMEC), Geert Eneman(Research Foundation - Flanders), Florence Bellenger(IMEC), Marc Meuris(IMEC), Jérôme Mitard(IMEC), Roger Loo(IMEC), K. De Meyer(IMEC), Clément Merckling(IMEC)
Cited by 60
Related Papers
Origin of NBTI variability in deeply scaled pFETs
|Unknown|2010|309
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252