Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs
M. Toledano-Luque(Universidad Complutense de Madrid), G. Groeseneken(KU Leuven), Ph. Roussel(IMEC), B. Kaczer(IMEC), R. Degraeve(IMEC), Tibor Grasser(TU Wien), J. Franco(KU Leuven), Eddy Simoen(IMEC)
Cited by 37
Related Papers
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
|Journal of Applied Physics|2001|772
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
|IEEE Transactions on Electron Devices|1998|647
Origin of the threshold voltage instability in SiO<sub>2</sub>/HfO<sub>2</sub> dual layer gate dielectrics
|IEEE Electron Device Letters|2003|360