Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and ReliabilityMohammed Zahid, Jan Van Houdt, B. Govoreanu et al.|IEEE Transactions on Electron Devices|2010Cited by 38
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) techniqueMoonju Cho, G. Groeseneken, R. Degraeve et al.|Solid-State Electronics|2010Cited by 26