Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application
Gouri Sankar Kar(IMEC), M. Jurczak(IMEC), Dirk J. Wouters(IMEC), Hilde Tielens(IMEC), L. Altimime(IMEC), S. Brus(University of Liège), Vasile Paraschiv(IMEC), Hubert Hody(IMEC), A. Fantini(IMEC), B. Govoreanu(IMEC), T. Vandeweyer(IMEC), Olivier Richard(IMEC), YY Chen(IMEC), N. Jossart(IMEC)
Cited by 13
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
|IEEE Transactions on Electron Devices|2013|259
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
|Applied Physics Letters|2010|229