Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET DevicesHiroaki Arimura, Naoto Horiguchi, RuoFei CHANG et al.|Unknown|2021Cited by 29
FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral CircuitsE. Capogreco, Naoto Horiguchi, Hiroaki Arimura et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 10
Insights into Scaled Logic Devices Connected from Both Wafer SidesA. Veloso, Naoto Horiguchi, Geert Eneman et al.|2022 International Electron Devices Meeting (IEDM)|2022Cited by 6
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFETHiroaki Arimura, Naoto Horiguchi, S. Brus et al.|Unknown|2023Cited by 6
Study on Alternative Dipole Material Wet Clean by pH Controlled Functional WaterYoïchi Tanaka, Naoto Horiguchi, Nobuko Gan et al.|Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena|2023Cited by 0