Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality
Frederik Leys(IMEC), Marc Heyns(IMEC), Jan Van Steenbergen(IMEC), Koen Martens(IMEC), Annelies Delabie(IMEC), David Hellin, Michel Houssa(IMEC), Jens Rip(IMEC), Gabriela Dilliway(University of Surrey), Tom Janssens(IMEC), Renaud Bonzom(IMEC), Wilfried Vandervorst(Imec the Netherlands), Matty Caymax(IMEC), Brice De Jaeger(IMEC), B. Kaczer(IMEC), Antoon Theuwis(Umicore (Belgium)), Paul Zimmerman(Intel (United States)), Marc Meuris(IMEC), Roger Loo(IMEC)
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