Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface qualityFrederik Leys, Marc Heyns, Wilfried Vandervorst et al.|Materials Science in Semiconductor Processing|2006Cited by 53
Epitaxy solutions for Ge MOS technologyFrederik Leys, Matty Caymax, Renaud Bonzom et al.|Thin Solid Films|2005Cited by 24