The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
Matty Caymax(IMEC), Roger Loo(IMEC), Koen Martens(IMEC), Frederik Leys(IMEC), Wilfried Vandervorst(Imec the Netherlands), Geoffrey Pourtois(IMEC), Marc Meuris(IMEC), Jéro me Mitard(IMEC), Lijun Yang(IMEC)
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