Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash MemoriesR. Degraeve, G. Tempel, F. Schuler et al.|IEEE Transactions on Electron Devices|2004Cited by 90
Analytical model for failure rate prediction due to anomalous charge loss of flash memoriesR. Degraeve, G. Tempel, Paul Hendrickx et al.|Unknown|2002Cited by 38
A new quantitative model to predict SILC-related disturb characteristics in flash E/sup 2/PROM devicesJ. De Blauwe, H.E. Maes, Jan Van Houdt et al.|Unknown|2002Cited by 33
Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layersR. Degraeve, G. Groeseneken, B. Kaczer et al.|Unknown|2002Cited by 25
A scalable Stacked Gate NOR/NAND Flash Technology compatible with high-k and metal gates for sub 45nm generationsJoeri De Vos, Jeroen Van Houdt, L. Haspeslagh et al.|Unknown|2006Cited by 9