Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devicesE. Miranda, Hiroshi Iwai, S. Kano et al.|Applied Physics Letters|2012Cited by 50
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layerChunmeng Dou, Hiroshi Iwai, Kuniyuki Kakushima et al.|Microelectronics Reliability|2011Cited by 45
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperaturesChunmeng Dou, G. Groeseneken, Dennis Lin et al.|Microelectronics Reliability|2014Cited by 32
Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its ScalabilityYan Wu, Hiroshi Iwai, Yoshinori Kataoka et al.|Japanese Journal of Applied Physics|2013Cited by 6
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurementChunmeng Dou, Hiroshi Iwai, Tomoya Shoji et al.|Microelectronics Reliability|2013Cited by 5