Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devicesE. Miranda, Hiroshi Iwai, Kuniyuki Kakushima et al.|Applied Physics Letters|2012Cited by 50
Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structuresE. Miranda, Hiroshi Iwai, Kuniyuki Kakushima et al.|Thin Solid Films|2012Cited by 1
Influence of Electrode Materials on CeO<sub>x</sub> Based Resistive SwitchingS. Kano, Hiroshi Iwai, Chunmeng Dou et al.|ECS Transactions|2012Cited by 1
Electron transport in CeO<inf>x</inf>-based resistive switching devicesE. Miranda, Hiroshi Iwai, S. Kano et al.|Unknown|2012Cited by 0
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