Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
E. Miranda(Universitat Autònoma de Barcelona), Hiroshi Iwai(Kyoto University), Kuniyuki Kakushima(Tokyo Institute of Technology), S. Kano(Tokyo Institute of Technology), J. Suñé(Universitat Autònoma de Barcelona), Chunmeng Dou(Chinese Academy of Sciences)
Cited by 50
Related Papers
Recommended Methods to Study Resistive Switching Devices
|Advanced Electronic Materials|2018|649
Conducting Polymer Nanostructures: Template Synthesis and Applications in Energy Storage
|International Journal of Molecular Sciences|2010|348
CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors
|Nature Electronics|2019|271
Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
|Applied Physics Letters|2009|118
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
|Advanced Materials|2022|106