Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures
Chunmeng Dou(Chinese Academy of Sciences), G. Groeseneken(KU Leuven), Abhitosh Vais(IMEC), Koen Martens(IMEC), Aaron Thean(National University of Singapore), Hiroshi Iwai(Kyoto University), Yuan Taur(University of California San Diego), Dennis Lin(IMEC), Hanping Chen(Huazhong University of Science and Technology), Tsvetan Ivanov(IMEC), Kuniyuki Kakushima(Tokyo Institute of Technology)
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